1. Education And Work Experience
Education Experience
1. Jan. 2010-Dec. 2015, Ph.D, Division of Microelectronics,EEE, Nanyang Technological University, Singapore
2. Aug. 2006-Jul. 2009, Master of Engineering, Microelectronics and Solid State Electronics Beijing University of Technology, China
3. Aug. 2000-Jul. 2004, B. Eng. of Applied physics Shenyang University of Technology, China
Work Experience
1. Aug. 2004 –Aug. 2006, Lithography Process Engineer, CSMC Technologies Corporation
2. Jul. 2009 –Dec. 2009, Process Integrated Engineer, CSMC Technologies Fab 2 Co., Ltd
3. Feb. 2014-Sep.2014, Senior Engineer, United Microelectronics Corporation, Singapore
4. Sep. 2014- Jul. 2022, Engineer, Southern university of Science and technology
5. Jul. 2022- now, Shenzhen Technology University
2. Research Field And Achievements
Project Experience
1. Development and application of high density nanopillar array based on electron beam exposure, Shenzhen Science technology and innovation Commission:JCYJ2017081710520497, from March 30, 2018 to September 30, 2020. HOST, Closed.¥300,000
2. Research on ultra high resolution multi physical field analysis microscopy technology and optimized preparation method based on the third generation semiconductor, Shenzhen Science and Technology Commission: JCYJ2019080914219365, February 28, 2020 - February 28, 2022, participated in, Closed.¥300,000
3. Research on low cost Gan power device fabrication and system integration technology, Shenzhen Science and technology innovation Commission: JCYJ2016026192639004, June 17, 2016 - June 30, 2019, participated in and concluded, Closed, ¥3,000,000
4. Research on new ultra-thin high-k gate dielectric and metal gate, Ministry of science and technology 02 major project,2013zx0230001-003, 2013-01-01 to 2016-03-31, participated in and concluded, Closed,¥510,000
Recently Published Articles
1. Tianli Duan, Chenjie Gu, Diing Shenp Ang, Kang Xu and Zhihong Liu， A novel fabrication technique for high-aspect-ratio nanopillar arrays for SERS application，RSC Adv., 2020, 10, 45037-45041
2. Tianli Duan, Kang Xu, Zhihong Liu, Chenjie Gu, Jisheng Pan, Diing Shenp Ang, Rui Zhang, Yao Wang, and Xuhang Ma, A novel fabrication technique for three-dimensional concave nanolens arrays, Journal of Materiomics, Vol.6, Issue 3, 557-562, 2020.
3. Tianli Duan, Yao Wang, Rui Zhang, Xuhang Ma, Chenjie Gu, A Dummy-Pattern-Assisted Lift-Off Method for Small and Dense Nanostructures, IOP Conf. Series: Materials Science and engineering， 774,012116, 2020.
4. Gu, Chenjie, Zhou, Canliang, Ang, Diing Shenp, Ju, Xin, Gu, Renyuan, Duan, Tianli. The role of the disordered HfO2 network in the high-kappa n-MOSFET shallow electron trapping. Journal of Applied Physics, 2019.
5. Fanming Zeng, Judy Xilin An, Guangnan Zhou, Wenmao Li, Hui Wang, Tianli Duan, Lingli Jiang and Hongyu Yu, A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability. Electronics，2018.
6. Chenjie GU, Diing Shenp ANG, Xin JU, Canliang ZHOU, Renyuan GU, and Tianli Duan, The Role of the Disordered HfO2 Network in the High-κ n-MOSFET Shallow Electron Trapping, Journal of Applied Physics，2018.
7. T. L. Duan, J. S. Pan, D. S. Ang, and C. J. Gu, Interfacial Chemistry Study of GaN by Trimethylaluminum-Only Cycles and X-ray Photoelectron Spectroscopy, Ecs Journal of Solid State Science and Technology, 7(5): P281-P286， 2018.
8. Xianqiang Liu, Xiaodi Xu, Chenjie Gu, Renyuan Gu, Weiwei Wang, Wenjun Liu, Tianli Duan, Investigating the impact of the defect dynamic characteristics on the PBTI in the high-κ gate device，Microelectronics Reliability, 80, 24–28,2018.
9. Ning Wang, Hui Wang, Xinpeng Lin, Yongle Qi, Tianli. Duan, Lingli Jiang, Elina Iervolino, Kai Cheng, and H. Yu, Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature, AIP Advances 7, (2017) 095317.
10. Tian Li Duan, Ji Sheng Pan, Ning Wang, Kai Cheng and Hong Yu Yu, Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy, Nanoscale Research Letters, 12:499, 2017.
11. T. L. Duan，L. Pan，Z. Zhang，E. S. Tok，J. S. Pan ，Characterization of the electronic structure and thermal stability of HfO2/SiO2/Si gate dielectric stack，Surface and Interface Analysis， 49（8）, 2017.
12. Duan, T. L.，Pan, J. S.，Ang, D. S.，Investigation of Surface Band Bending of Ga-Face GaN by Angle-Resolved X-ray Photoelectron Spectroscopy，Ecs Journal of Solid State Science and Technology，2016，5（9）：P514-P517。
13. Duan, T. L.，Pan, J. S.，Ang, D. S.，Effect of Post-Deposition Annealing on the Interface Electronic Structures of Al2O3-Capped GaN and GaN/AlGaN/GaN Heterostructure，Ecs Journal of Solid State Science and Technology，2015，4（9）：P364-P368。
14. Wan, Guangxing，Duan, Tianli，Zhang, Shuxiang，Jiang, Lingli，Tang,Bo，Yan, J.，Zhao, Chao，Zhu, Huilong，Yu, HongYu，Overshoot Stress on Ultra-Thin HfO2 High-kappa Layer and Its Impact on Lifetime Extraction，IEEE Electron Device Letters，2015，36（12）：1267-1270。
15. Duan, T. L.，Pan, J. S.，Ang, D. S.，Interfacial chemistry and valence band offset between GaN and Al2O3 studied by X-ray photoelectron spectroscopy，Applied Physics Letters，2013，102（20）。
16. Duan, Tianli，Ang, Diing Shenp，Capacitance Hysteresis in the High-k/Metal Gate-Stack From Pulsed Measurement，IEEE Transactions on Electron Devices，2013，60（4）：1349-1354。
17. Duan, T. L.，Yu, H. Y.，Wu, L.，Wang, Z. R.，Foo, Y. L.，Pan, J.S.，Investigation of HfO2 high-k dielectrics electronic structure on SiO2/Si substrate by x-ray photoelectron spectroscopy，Applied Physics Letters，2011，99（1）。
18. Wu, Ling，Yu, HongYu ，Yew, K. S.，Pan, Jisheng， Liu, W. J.，Duan,TianLi, Multideposition Multiroom-Temperature Annealing via Ultraviolet Ozone for HfZrO High-κ and Integration With a TiN Metal Gate in a Gate-Last Process，IEEE Transactions ON Electron Devices，2011，58（7）：2177-2181。
19. DUAN Tianli CUI Bifeng ZHANG Lei ZOU Deshu WANG Zhiqun SHEN Guangdi “The lateral confinement of strip laser bars”, Research & progress of solid state electronics, 2009, 29(3)
20. DUAN Tianli CUI Bifeng WANG Zhiqun SHEN Guangdi, “The Relations between the Threshold Current and the Length of Cavity of Quantum Well Lasers.” Research & progress of solid state electronics, 2010, 30(2)
21. ZHANG Lei CUI Bifeng DUAN Tianli MA Nan GUO Weiling WANG Zhiqun SHEN Guangdi,” Three dimension temperature distribution analysis of tunnel regeneration semiconductor laser” Journal of functional materials and devices, 2008, 14(4)
3. Teaching Summary
Analog Electronics, Computer simulation and rapid prototyping, circuit, Physics of Semiconductor Devices.
